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Type | Description |
---|---|
Series: | Z-FET™ |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Rds On (Max) @ Id, Vgs: | 370mOhm @ 6A, 20V |
Vgs(th) (Max) @ Id: | 2.8V @ 1.25mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: | 20.4 nC @ 20 V |
Vgs (Max): | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: | 259 pF @ 1000 V |
FET Feature: | - |
Power Dissipation (Max): | 62.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
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