NTBG020N120SC1

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Part No :: NTBG020N120SC1

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: SICFET N-CH 1200V 8.6A/98A D2PAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 15 - Jul 19 2025

DataSheet: NTBG020N120SC1 PDF

Availability: 1038 pieces

Unit Price: ~~$28.84000~~

Current price of NTBG020N120SC1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NTBG020N120SC1 Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	8.6A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id:	4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:	220 nC @ 20 V
Vgs (Max):	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:	2943 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	3.7W (Ta), 468W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK-7
Package / Case:	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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