SPD15P10PLGBTMA1

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Part No :: SPD15P10PLGBTMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET P-CH 100V 15A TO252-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 14 - Jul 18 2025

DataSheet: SPD15P10PLGBTMA1 PDF

Availability: 0 pieces

Unit Price: ~~$1.95000~~

Current price of SPD15P10PLGBTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SPD15P10PLGBTMA1 Specifications

Type	Description
Series:	SIPMOS®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	200mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id:	2V @ 1.54mA
Gate Charge (Qg) (Max) @ Vgs:	62 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1490 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	128W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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