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Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 18V |
Rds On (Max) @ Id, Vgs: | 117mOhm @ 10A, 18V |
Vgs(th) (Max) @ Id: | 4V @ 4.4mA |
Gate Charge (Qg) (Max) @ Vgs: | 106 nC @ 18 V |
Vgs (Max): | +22V, -6V |
Input Capacitance (Ciss) (Max) @ Vds: | 2080 pF @ 800 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247N |
Package / Case: | TO-247-3 |
SICFET N-CH 1200V 40A TO247N
INDUSTRIAL SSD, SLIM-SATA, 64GB,
IC DUAL DEC RIPPLE COUNT 16-SSOP
LIGHTNING PROTECTION SURGE PROTE