SISS60DN-T1-GE3

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Part No :: SISS60DN-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 30V 50.1/181.8A PPAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 27 - Jul 31 2025

DataSheet: SISS60DN-T1-GE3 PDF

Availability: 5778 pieces

Unit Price: ~~$1.58000~~

Current price of SISS60DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SISS60DN-T1-GE3 Specifications

Type	Description
Series:	TrenchFET® Gen IV
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	50.1A (Ta), 181.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.31mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	85.5 nC @ 10 V
Vgs (Max):	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:	3960 pF @ 15 V
FET Feature:	Schottky Diode (Body)
Power Dissipation (Max):	5.1W (Ta), 65.8W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 1212-8S
Package / Case:	PowerPAK® 1212-8S

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