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IPI111N15N3GAKSA1

IPI111N15N3GAKSA1

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Part No :

IPI111N15N3GAKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 150V 83A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 28 - Aug 01 2025
DataSheet
IPI111N15N3GAKSA1 PDF
Availability
0 pieces
Unit Price
$2.81634

Current price of IPI111N15N3GAKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPI111N15N3GAKSA1 Specifications
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:83A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:11.1mOhm @ 83A, 10V
Vgs(th) (Max) @ Id:4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3230 pF @ 75 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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