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IPN80R2K0P7ATMA1

IPN80R2K0P7ATMA1

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Part No :

IPN80R2K0P7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CHANNEL 800V 3A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 29 - Aug 02 2025
DataSheet
IPN80R2K0P7ATMA1 PDF
Availability
3957 pieces
Unit Price
$0.95000

Current price of IPN80R2K0P7ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPN80R2K0P7ATMA1 Specifications
Type Description
Series:CoolMOS™ P7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:175 pF @ 500 V
FET Feature:-
Power Dissipation (Max):6W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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