Current price of IXFN50N120SK is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Rds On (Max) @ Id, Vgs: | 52mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id: | 2.8V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: | 115 nC @ 20 V |
Vgs (Max): | +20V, -5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1895 pF @ 1000 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SOT-227B |
Package / Case: | SOT-227-4, miniBLOC |
MOSFET N-CH 200V 70A TO3PN
SICFET N-CH 1200V 48A SOT227B
DGTL OSCOPE 12BIT 200MHZ 2CH
CONN FERRULE DIN 6AWG