FQD13N10LTM

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Part No :: FQD13N10LTM

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: MOSFET N-CH 100V 10A DPAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 14 - Jul 18 2025

DataSheet: FQD13N10LTM PDF

Availability: 1381 pieces

Unit Price: ~~$0.68000~~

Current price of FQD13N10LTM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FQD13N10LTM Specifications

Type	Description
Series:	QFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	12 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	520 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 40W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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