SPB21N50C3ATMA1

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Part No :: SPB21N50C3ATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 560V 21A TO263-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 15 - Jul 19 2025

DataSheet: SPB21N50C3ATMA1 PDF

Availability: 1047 pieces

Unit Price: ~~$4.11000~~

Current price of SPB21N50C3ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SPB21N50C3ATMA1 Specifications

Type	Description
Series:	CoolMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Not For New Designs
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	560 V
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id:	3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	95 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2400 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	208W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-3-2
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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