RM6N800LD

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Part No :: RM6N800LD

Manufacturer: Rectron USA

Description: MOSFET N-CHANNEL 800V 6A TO252-2

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 20 - Jul 24 2025

DataSheet: RM6N800LD PDF

Availability: 0 pieces

Unit Price: ~~$0.70000~~

Current price of RM6N800LD is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

RM6N800LD Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800 V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1290 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	98W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252-2
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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