SI3459BDV-T1-GE3

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Part No :: SI3459BDV-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET P-CH 60V 2.9A 6TSOP

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 28 - Aug 01 2025

DataSheet: SI3459BDV-T1-GE3 PDF

Availability: 14833 pieces

Unit Price: ~~$0.78000~~

Current price of SI3459BDV-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI3459BDV-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	216mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	12 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	350 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	2W (Ta), 3.3W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-TSOP
Package / Case:	SOT-23-6 Thin, TSOT-23-6

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