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IPP037N08N3GXKSA1

IPP037N08N3GXKSA1

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Part No :

IPP037N08N3GXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 100A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 29 - Aug 02 2025
DataSheet
IPP037N08N3GXKSA1 PDF
Availability
0 pieces
Unit Price
$3.05000

Current price of IPP037N08N3GXKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPP037N08N3GXKSA1 Specifications
Type Description
Series:OptiMOS™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:3.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8110 pF @ 40 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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