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IXTY1R6N100D2

IXTY1R6N100D2

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Part No :

IXTY1R6N100D2

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1000V 1.6A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 24 - Jul 28 2025
DataSheet
IXTY1R6N100D2 PDF
Availability
0 pieces
Unit Price
$2.64000

Current price of IXTY1R6N100D2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IXTY1R6N100D2 Specifications
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:10Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:645 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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