IPZ40N04S55R4ATMA1

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Part No :: IPZ40N04S55R4ATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 40V 40A 8TSDSON

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 27 - Jul 31 2025

DataSheet: IPZ40N04S55R4ATMA1 PDF

Availability: 14851 pieces

Unit Price: ~~$1.06000~~

Current price of IPZ40N04S55R4ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPZ40N04S55R4ATMA1 Specifications

Type	Description
Series:	Automotive, AEC-Q101, OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	7V, 10V
Rds On (Max) @ Id, Vgs:	5.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	3.4V @ 17µA
Gate Charge (Qg) (Max) @ Vgs:	23 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1300 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	48W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TSDSON-8
Package / Case:	8-PowerVDFN

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