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Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000 V |
Current - Continuous Drain (Id) @ 25°C: | 1.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 10Ohm @ 800mA, 0V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 27 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 645 pF @ 25 V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (IXTA) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
RES ARRAY 8 RES 1.96K OHM 1606
MOSFET N-CH 1000V 1.6A TO263
IC FRAM 4KBIT I2C 3.4MHZ 8SOIC
CONN MICRO-D RCPT 37P VERT SLDR