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RS1E350BNTB

RS1E350BNTB

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Part No :

RS1E350BNTB

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 35A 8HSOP
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 29 - Aug 02 2025
DataSheet
RS1E350BNTB PDF
Availability
1899 pieces
Unit Price
$1.77000

Current price of RS1E350BNTB is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

RS1E350BNTB Specifications
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:185 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7900 pF @ 15 V
FET Feature:-
Power Dissipation (Max):35W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSOP
Package / Case:8-PowerTDFN
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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