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NVMYS3D3N06CLTWG

NVMYS3D3N06CLTWG

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Part No :

NVMYS3D3N06CLTWG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 26A/133A 4LFPAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 02 - Aug 06 2025
DataSheet
NVMYS3D3N06CLTWG PDF
Availability
292915000 pieces
Unit Price
$1.46000

Current price of NVMYS3D3N06CLTWG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NVMYS3D3N06CLTWG Specifications
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:26A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2880 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.9W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-LFPAK
Package / Case:SOT-1023, 4-LFPAK
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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