NVMYS3D3N06CLTWG

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Part No :: NVMYS3D3N06CLTWG

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: MOSFET N-CH 60V 26A/133A 4LFPAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 24 - Aug 28 2025

DataSheet: NVMYS3D3N06CLTWG PDF

Availability: 292915000 pieces

Unit Price: ~~$1.46000~~

Current price of NVMYS3D3N06CLTWG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NVMYS3D3N06CLTWG Specifications

Type	Description
Series:	Automotive, AEC-Q101
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	26A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	40.7 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2880 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	3.9W (Ta), 100W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	4-LFPAK
Package / Case:	SOT-1023, 4-LFPAK

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