BSB008NE2LXXUMA1

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Part No :: BSB008NE2LXXUMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 25V 46A/180A 2WDSON

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 22 - Jul 26 2025

DataSheet: BSB008NE2LXXUMA1 PDF

Availability: 5000 pieces

Unit Price: ~~$2.63000~~

Current price of BSB008NE2LXXUMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSB008NE2LXXUMA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	46A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	0.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	343 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	16000 pF @ 12 V
FET Feature:	-
Power Dissipation (Max):	2.8W (Ta), 89W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	MG-WDSON-2, CanPAK M™
Package / Case:	3-WDSON

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