SIR626DP-T1-RE3

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Part No :: SIR626DP-T1-RE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 60V 100A PPAK SO-8

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 20 - Jul 24 2025

DataSheet: SIR626DP-T1-RE3 PDF

Availability: 8453 pieces

Unit Price: ~~$1.97000~~

Current price of SIR626DP-T1-RE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIR626DP-T1-RE3 Specifications

Type	Description
Series:	TrenchFET® Gen IV
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	78 nC @ 7.5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	5130 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	104W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SO-8
Package / Case:	PowerPAK® SO-8

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