SI8466EDB-T2-E1

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Part No :: SI8466EDB-T2-E1

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 8V 4MICROFOOT

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 20 - Jul 24 2025

DataSheet: SI8466EDB-T2-E1 PDF

Availability: 12970 pieces

Unit Price: ~~$0.53000~~

Current price of SI8466EDB-T2-E1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI8466EDB-T2-E1 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	8 V
Current - Continuous Drain (Id) @ 25°C:	3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Rds On (Max) @ Id, Vgs:	43mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:	700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	13 nC @ 4.5 V
Vgs (Max):	±5V
Input Capacitance (Ciss) (Max) @ Vds:	710 pF @ 4 V
FET Feature:	-
Power Dissipation (Max):	780mW (Ta), 1.8W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	4-Microfoot
Package / Case:	4-UFBGA, WLCSP

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