TK12V60W,LVQ

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Part No :: TK12V60W,LVQ

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: MOSFET N-CH 600V 11.5A 4DFN

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 26 - Jul 30 2025

DataSheet: TK12V60W,LVQ PDF

Availability: 0 pieces

Unit Price: ~~$0.99912~~

Current price of TK12V60W,LVQ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TK12V60W,LVQ Specifications

Type	Description
Series:	DTMOSIV
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	300mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:	3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:	25 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	890 pF @ 300 V
FET Feature:	Super Junction
Power Dissipation (Max):	104W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	4-DFN-EP (8x8)
Package / Case:	4-VSFN Exposed Pad

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