FQD6N25TM

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Part No :: FQD6N25TM

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: MOSFET N-CH 250V 4.4A DPAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 21 - Jul 25 2025

DataSheet: FQD6N25TM PDF

Availability: 2375 pieces

Unit Price: ~~$0.64000~~

Current price of FQD6N25TM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FQD6N25TM Specifications

Type	Description
Series:	QFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	250 V
Current - Continuous Drain (Id) @ 25°C:	4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8.5 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	300 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 45W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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Delivery date: usually 2 to 7 working days.
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