TK12Q60W,S1VQ

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Part No :: TK12Q60W,S1VQ

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: MOSFET N CH 600V 11.5A IPAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 26 - Aug 30 2025

DataSheet: TK12Q60W,S1VQ PDF

Availability: 0 pieces

Unit Price: ~~$1.65000~~

Current price of TK12Q60W,S1VQ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TK12Q60W,S1VQ Specifications

Type	Description
Series:	DTMOSIV
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	340mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:	3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:	25 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	890 pF @ 300 V
FET Feature:	Super Junction
Power Dissipation (Max):	100W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Stub Leads, IPak

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