NVH4L080N120SC1

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Part No :: NVH4L080N120SC1

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: TRANS SJT N-CH 1200V 29A TO247-4

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 20 - Jul 24 2025

DataSheet: NVH4L080N120SC1 PDF

Availability: 1875 pieces

Unit Price: ~~$11.78000~~

Current price of NVH4L080N120SC1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NVH4L080N120SC1 Specifications

Type	Description
Series:	Automotive, AEC-Q101
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:	4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:	56 nC @ 20 V
Vgs (Max):	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:	1670 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	170mW (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-4
Package / Case:	TO-247-4

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