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NTLJS1102PTBG

NTLJS1102PTBG

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Part No :

NTLJS1102PTBG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 8V 3.7A 6WDFN
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 20 - Aug 24 2025
DataSheet
NTLJS1102PTBG PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of NTLJS1102PTBG is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NTLJS1102PTBG Specifications
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:36mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id:720mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 4.5 V
Vgs (Max):±6V
Input Capacitance (Ciss) (Max) @ Vds:1585 pF @ 4 V
FET Feature:-
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
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NTLJS1102PTBG

NTLJS1102PTBG

MOSFET P-CH 8V 3.7A 6WDFN

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