GA100JT12-227

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Part No :: GA100JT12-227

Manufacturer: GeneSiC Semiconductor

Description: TRANS SJT 1200V 160A SOT227

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 09 - Aug 13 2025

DataSheet: GA100JT12-227 PDF

Availability: 0 pieces

Unit Price: ~~$0.00000~~

Current price of GA100JT12-227 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

GA100JT12-227 Specifications

Type	Description
Series:	-
Package:	Tube
Part Status:	Obsolete
FET Type:	-
Technology:	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	10mOhm @ 100A
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	14400 pF @ 800 V
FET Feature:	-
Power Dissipation (Max):	535W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Supplier Device Package:	SOT-227
Package / Case:	SOT-227-4, miniBLOC

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