SIB410DK-T1-GE3

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Part No :: SIB410DK-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 30V 9A PPAK SC75-6

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 14 - Jul 18 2025

DataSheet: SIB410DK-T1-GE3 PDF

Availability: 0 pieces

Unit Price: ~~$0.00000~~

Current price of SIB410DK-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIB410DK-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 8 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	560 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 13W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SC-75-6L Single
Package / Case:	PowerPAK® SC-75-6L

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