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SIB410DK-T1-GE3

SIB410DK-T1-GE3

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Part No :

SIB410DK-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 9A PPAK SC75-6
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 09 - Jul 13 2025
DataSheet
SIB410DK-T1-GE3 PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of SIB410DK-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIB410DK-T1-GE3 Specifications
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:560 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 13W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-75-6L Single
Package / Case:PowerPAK® SC-75-6L
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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