SI4462DY-T1-GE3

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Part No :: SI4462DY-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 200V 1.15A 8SO

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 28 - Aug 01 2025

DataSheet: SI4462DY-T1-GE3 PDF

Availability: 0 pieces

Unit Price: ~~$0.00000~~

Current price of SI4462DY-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI4462DY-T1-GE3 Specifications

Type	Description
Series:	TrenchFET®
Package:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	1.15A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	480mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	9 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	-
FET Feature:	-
Power Dissipation (Max):	1.3W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)

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