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IPB80N04S403JEATMA1

IPB80N04S403JEATMA1

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Part No :

IPB80N04S403JEATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 80A TO263-3-2
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 07 - Jul 11 2025
DataSheet
IPB80N04S403JEATMA1 PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of IPB80N04S403JEATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPB80N04S403JEATMA1 Specifications
Type Description
Series:OptiMOS®-T2
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 53µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5260 pF @ 25 V
FET Feature:-
Power Dissipation (Max):94W (Tc)
Operating Temperature:-55°C ~ 155°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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