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SPD11N10

SPD11N10

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Part No :

SPD11N10

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 10.5A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 17 - Aug 21 2025
DataSheet
SPD11N10 PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of SPD11N10 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SPD11N10 Specifications
Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:170mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs:18.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:P-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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