2N7636-GA

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Part No :: 2N7636-GA

Manufacturer: GeneSiC Semiconductor

Description: TRANS SJT 650V 4A TO276

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 03 - Aug 07 2025

DataSheet: 2N7636-GA PDF

Availability: 0 pieces

Unit Price: ~~$0.00000~~

Current price of 2N7636-GA is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

2N7636-GA Specifications

Type	Description
Series:	-
Package:	Tube
Part Status:	Obsolete
FET Type:	-
Technology:	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	415mOhm @ 4A
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	324 pF @ 35 V
FET Feature:	-
Power Dissipation (Max):	125W (Tc)
Operating Temperature:	-55°C ~ 225°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-276
Package / Case:	TO-276AA

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