DF200R12KE3HOSA1

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Part No :

DF200R12KE3HOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MODULE 1200V 1040W
Catalog
Transistors - IGBTs - Modules
Shipped from
HK warehouse
Expected Shipping Date
Jul 02 - Jul 06 2025
DataSheet
DF200R12KE3HOSA1 PDF
Availability
0 pieces
Unit Price
$109.87200

Current price of DF200R12KE3HOSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:-
Configuration:Single
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):-
Power - Max:1040 W
Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 200A
Current - Collector Cutoff (Max):5 mA
Input Capacitance (Cies) @ Vce:14 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:-40°C ~ 125°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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