DD1200S12H4HOSA1

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Part No :: DD1200S12H4HOSA1

Manufacturer: IR (Infineon Technologies)

Description: IGBT MODULE 1200V 1200A

Catalog: Transistors - IGBTs - Modules

Shipped from: HK warehouse

Expected Shipping Date: Aug 03 - Aug 07 2025

DataSheet: DD1200S12H4HOSA1 PDF

Availability: 0 pieces

Unit Price: ~~$811.79500~~

Current price of DD1200S12H4HOSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

DD1200S12H4HOSA1 Specifications

Type	Description
Series:	-
Package:	Tray
Part Status:	Active
IGBT Type:	-
Configuration:	2 Independent
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	1200 A
Power - Max:	1200000 W
Vce(on) (Max) @ Vge, Ic:	2.35V @ 15V, 1200A
Current - Collector Cutoff (Max):	-
Input Capacitance (Cies) @ Vce:	-
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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