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DD1200S12H4HOSA1

DD1200S12H4HOSA1

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Part No :

DD1200S12H4HOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MODULE 1200V 1200A
Catalog
Transistors - IGBTs - Modules
Shipped from
HK warehouse
Expected Shipping Date
Aug 27 - Aug 31 2025
DataSheet
DD1200S12H4HOSA1 PDF
Availability
0 pieces
Unit Price
$811.79500

Current price of DD1200S12H4HOSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

DD1200S12H4HOSA1 Specifications
Type Description
Series:-
Package:Tray
Part Status:Active
IGBT Type:-
Configuration:2 Independent
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):1200 A
Power - Max:1200000 W
Vce(on) (Max) @ Vge, Ic:2.35V @ 15V, 1200A
Current - Collector Cutoff (Max):-
Input Capacitance (Cies) @ Vce:-
Input:Standard
NTC Thermistor:No
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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IGBT MODULE 1200V 1200A

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