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HGT1S10N120BNST

HGT1S10N120BNST

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Part No :

HGT1S10N120BNST

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 1200V 35A 298W TO263AB
Catalog
Transistors - IGBTs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 26 - Jul 30 2025
DataSheet
HGT1S10N120BNST PDF
Availability
0 pieces
Unit Price
$2.62000

Current price of HGT1S10N120BNST is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

HGT1S10N120BNST Specifications
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):35 A
Current - Collector Pulsed (Icm):80 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Power - Max:298 W
Switching Energy:320µJ (on), 800µJ (off)
Input Type:Standard
Gate Charge:100 nC
Td (on/off) @ 25°C:23ns/165ns
Test Condition:960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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