RGT30NS65DGC9

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Part No :: RGT30NS65DGC9

Manufacturer: ROHM Semiconductor

Description: IGBT

Catalog: Transistors - IGBTs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 26 - Aug 30 2025

DataSheet: RGT30NS65DGC9 PDF

Availability: 2990 pieces

Unit Price: ~~$2.69000~~

Current price of RGT30NS65DGC9 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

RGT30NS65DGC9 Specifications

Type	Description
Series:	-
Package:	Tube
Part Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	30 A
Current - Collector Pulsed (Icm):	45 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 15A
Power - Max:	133 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	32 nC
Td (on/off) @ 25°C:	18ns/64ns
Test Condition:	400V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr):	55 ns
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262

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