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Type | Description |
---|---|
Series: | BIMOSFET™ |
Package: | Tube |
Part Status: | Not For New Designs |
IGBT Type: | - |
Voltage - Collector Emitter Breakdown (Max): | 3600 V |
Current - Collector (Ic) (Max): | 70 A |
Current - Collector Pulsed (Icm): | 220 A |
Vce(on) (Max) @ Vge, Ic: | 3.4V @ 15V, 20A |
Power - Max: | 430 W |
Switching Energy: | 15.5mJ (on), 4.3mJ (off) |
Input Type: | Standard |
Gate Charge: | 110 nC |
Td (on/off) @ 25°C: | 18ns/238ns |
Test Condition: | 1500V, 20A, 10Ohm, 15V |
Reverse Recovery Time (trr): | 1.7 µs |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
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