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HGTP5N120BND

HGTP5N120BND

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Part No :

HGTP5N120BND

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 1200V 21A 167W TO220AB
Catalog
Transistors - IGBTs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 20 - Aug 24 2025
DataSheet
HGTP5N120BND PDF
Availability
0 pieces
Unit Price
$1.38624

Current price of HGTP5N120BND is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

HGTP5N120BND Specifications
Type Description
Series:-
Package:Tube
Part Status:Not For New Designs
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):21 A
Current - Collector Pulsed (Icm):40 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 5A
Power - Max:167 W
Switching Energy:450µJ (on), 390µJ (off)
Input Type:Standard
Gate Charge:53 nC
Td (on/off) @ 25°C:22ns/160ns
Test Condition:960V, 5A, 25Ohm, 15V
Reverse Recovery Time (trr):65 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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