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Type | Description |
---|---|
Series: | BIMOSFET™ |
Package: | Tube |
Part Status: | Active |
IGBT Type: | - |
Voltage - Collector Emitter Breakdown (Max): | 1700 V |
Current - Collector (Ic) (Max): | 42 A |
Current - Collector Pulsed (Icm): | 265 A |
Vce(on) (Max) @ Vge, Ic: | 6V @ 15V, 21A |
Power - Max: | 357 W |
Switching Energy: | 3.43mJ (on), 430µJ (off) |
Input Type: | Standard |
Gate Charge: | 188 nC |
Td (on/off) @ 25°C: | 19ns/200ns |
Test Condition: | 850V, 21A, 1Ohm, 15V |
Reverse Recovery Time (trr): | 330 ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
IGBT 1700V 42A 357W TO268
HIGHWITHSTAND VOLTAGE HIGH-SPEED
MEMS OSC XO 200.0000MHZ LVDS SMD
ROUTER 3G CDMA BELL DC POWERED