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GT10J312(Q)

GT10J312(Q)

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Part No :

GT10J312(Q)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
IGBT 600V 10A 60W TO220SM
Catalog
Transistors - IGBTs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 25 - Aug 29 2025
DataSheet
GT10J312(Q) PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of GT10J312(Q) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

GT10J312(Q) Specifications
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):10 A
Current - Collector Pulsed (Icm):20 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Power - Max:60 W
Switching Energy:-
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:400ns/400ns
Test Condition:300V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr):200 ns
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-220SM
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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