RN1110,LF(CT

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Part No :

RN1110,LF(CT

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS PREBIAS NPN 50V 0.1A SSM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Shipped from
HK warehouse
Expected Shipping Date
Jul 15 - Jul 19 2025
DataSheet
RN1110,LF(CT PDF
Availability
0 pieces
Unit Price
$0.03657

Current price of RN1110,LF(CT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250 MHz
Power - Max:100 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SSM
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  • Delivery date: usually 2 to 7 working days.
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