IPG20N06S2L65ATMA1

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Part No :

IPG20N06S2L65ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET 2N-CH 55V 20A TDSON-8-4
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 01 - Jul 05 2025
DataSheet
IPG20N06S2L65ATMA1 PDF
Availability
5000 pieces
Unit Price
$0.96000

Current price of IPG20N06S2L65ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:*
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):55V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:410pF @ 25V
Power - Max:43W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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