IPD122N10N3GATMA1

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Part No :: IPD122N10N3GATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 100V 59A TO252-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 27 - Jul 31 2025

DataSheet: IPD122N10N3GATMA1 PDF

Availability: 34187 pieces

Unit Price: ~~$1.55000~~

Current price of IPD122N10N3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPD122N10N3GATMA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	59A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	12.2mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs:	35 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2500 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	94W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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