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SI8497DB-T2-E1

SI8497DB-T2-E1

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Part No :

SI8497DB-T2-E1

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 30V 13A 6MICROFOOT
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 02 - Aug 06 2025
DataSheet
SI8497DB-T2-E1 PDF
Availability
4998 pieces
Unit Price
$0.62000

Current price of SI8497DB-T2-E1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI8497DB-T2-E1 Specifications
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2V, 4.5V
Rds On (Max) @ Id, Vgs:53mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1320 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.77W (Ta), 13W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-microfoot
Package / Case:6-UFBGA
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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