FQU2N90TU-WS

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Part No :: FQU2N90TU-WS

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: MOSFET N-CH 900V 1.7A IPAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 08 - Jul 12 2025

DataSheet: FQU2N90TU-WS PDF

Availability: 8419 pieces

Unit Price: ~~$1.05000~~

Current price of FQU2N90TU-WS is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FQU2N90TU-WS Specifications

Type	Description
Series:	QFET®
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	900 V
Current - Continuous Drain (Id) @ 25°C:	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	7.2Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	500 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 50W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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