SIHJ8N60E-T1-GE3

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Part No :: SIHJ8N60E-T1-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 600V 8A PPAK SO-8

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 01 - Aug 05 2025

DataSheet: SIHJ8N60E-T1-GE3 PDF

Availability: 2990 pieces

Unit Price: ~~$2.30000~~

Current price of SIHJ8N60E-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIHJ8N60E-T1-GE3 Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	520mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	44 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	754 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	89W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SO-8
Package / Case:	PowerPAK® SO-8

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Delivery date: usually 2 to 7 working days.
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