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SQ2309ES-T1_GE3

SQ2309ES-T1_GE3

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Part No :

SQ2309ES-T1_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 60V 1.7A TO236
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 26 - Jul 30 2025
DataSheet
SQ2309ES-T1_GE3 PDF
Availability
746 pieces
Unit Price
$0.58000

Current price of SQ2309ES-T1_GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SQ2309ES-T1_GE3 Specifications
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:336mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:265 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236 (SOT-23)
Package / Case:TO-236-3, SC-59, SOT-23-3
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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