SQ2309ES-T1_GE3

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Part No :: SQ2309ES-T1_GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET P-CH 60V 1.7A TO236

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 25 - Jul 29 2025

DataSheet: SQ2309ES-T1_GE3 PDF

Availability: 746 pieces

Unit Price: ~~$0.58000~~

Current price of SQ2309ES-T1_GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SQ2309ES-T1_GE3 Specifications

Type	Description
Series:	Automotive, AEC-Q101, TrenchFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	336mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8.5 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	265 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-236 (SOT-23)
Package / Case:	TO-236-3, SC-59, SOT-23-3

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