SISH536DN-T1-GE3

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Part No :: SISH536DN-T1-GE3

Manufacturer: Vishay / Siliconix

Description: N-CHANNEL 30 V (D-S) MOSFET POWE

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 03 - Aug 07 2025

DataSheet: SISH536DN-T1-GE3 PDF

Availability: 0 pieces

Unit Price: ~~$0.66000~~

Current price of SISH536DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SISH536DN-T1-GE3 Specifications

Type	Description
Series:	TrenchFET® Gen V
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	24.7A (Ta), 67.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	3.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	25 nC @ 10 V
Vgs (Max):	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:	1150 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	3.57W (Ta), 26.5W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 1212-8SH
Package / Case:	PowerPAK® 1212-8SH

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